Hole transport in DGSOI devices: Orientation and silicon thickness effects

  1. Donetti, L.
  2. Gámiz, F.
  3. Rodríguez, N.
  4. Jiménez-Molinos, F.
  5. Roldán, J.B.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2010

Volume: 54

Issue: 2

Pages: 191-195

Type: Article

DOI: 10.1016/J.SSE.2009.12.018 GOOGLE SCHOLAR
Data source: Scopus