A theoretical interpretation of magnetoresistance mobility in silicon inversion layers

  1. Donetti, L.
  2. Gámiz, F.
  3. Cristoloveanu, S.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2007

Alea: 102

Zenbakia: 1

Mota: Artikulua

DOI: 10.1063/1.2752103 GOOGLE SCHOLAR