A theoretical interpretation of magnetoresistance mobility in silicon inversion layers

  1. Donetti, L.
  2. Gámiz, F.
  3. Cristoloveanu, S.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2007

Volumen: 102

Número: 1

Type: Article

DOI: 10.1063/1.2752103 GOOGLE SCHOLAR