An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

  1. Rodriguez, N.
  2. Roldán, J.B.
  3. Gámiz, F.
Aldizkaria:
Semiconductor Science and Technology

ISSN: 0268-1242,  1361-6641

Argitalpen urtea: 2007

Alea: 22

Zenbakia: 4

Orrialdeak: 348-353

Mota: Artikulua

DOI: 10.1088/0268-1242/22/4/009 GOOGLE SCHOLAR
Datuen iturria: Scopus