Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices

  1. Gehring, A.
  2. Jiménez-Molinos, F.
  3. Kosina, H.
  4. Palma, A.
  5. Gámiz, F.
  6. Selberherr, S.
Journal:
Microelectronics Reliability

ISSN: 0026-2714

Year of publication: 2003

Volume: 43

Issue: 9-11

Pages: 1495-1500

Type: Conference paper

DOI: 10.1016/S0026-2714(03)00265-8 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus