Effects of the inversionlayer centroid on the performance of doublegate MOSFET's

  1. LöpezVillanueva, J.A.
  2. CartujoCassinello, P.
  3. Gâmiz, F.
  4. Banqueri, J.
  5. Raima, A.J.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2000

Volume: 47

Issue: 1

Pages: 141146

Type: Article

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Data source: Scopus