Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs

  1. Godoy, A.
  2. Palma, A.
  3. Gamiz, F.
  4. Jimenez-Tejada, J.A.
  5. Cartujo, P.
Konferenzberichte:
Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

Datum der Publikation: 1997

Seiten: 201-204

Art: Konferenz-Beitrag

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Datenquelle: Scopus