Effects of the inversion layer centroid on MOSFET behavior

  1. Löpez-Villanueva, J.A.
  2. Cartujo-Casinello, P.
  3. Banqueri, J.
  4. Gâmiz, F.
  5. Rodriguez, S.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 1997

Volume: 44

Issue: 11

Pages: 1915-1922

Type: Article

DOI: 10.1109/16.641361 GOOGLE SCHOLAR
Data source: Scopus