Ge content and recess depth dependence of the band-to-band tunneling current in Si1-xGex/Si hetero-junctions

  1. Rodríguez, A.L.
  2. Tejada, J.A.J.
  3. Gonzalez, M.B.
  4. Eneman, G.
  5. Claeys, C.
  6. Simoen, E.
Proceedings:
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

ISBN: 9781424478637

Year of publication: 2011

Type: Conference paper

DOI: 10.1109/SCED.2011.5744201 GOOGLE SCHOLAR
Data source: Scopus