Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory

  1. Calixto, M.
  2. Maldonado, D.
  3. Miranda, E.
  4. Roldán, J.B.
Journal:
Journal of Physics D: Applied Physics

ISSN: 1361-6463,  0022-3727

Year of publication: 2020

Volume: 53

Issue: 29

Type: Article

DOI: 10.1088/1361-6463/AB85E5 GOOGLE SCHOLAR
Data source: Scopus