Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories
- Maldonado, D.
- Roldán, A.M.
- González, M.B.
- Jiménez-Molinos, F.
- Campabadal, F.
- Roldán, J.B.
Revista:
Microelectronic Engineering
ISSN: 0167-9317
Any de publicació: 2019
Volum: 215
Tipus: Article