Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices

  1. Rodriguez-Fernandez, A.
  2. Aldana, S.
  3. Campabadal, F.
  4. Sune, J.
  5. Miranda, E.
  6. Jimenez-Molinos, F.
  7. Roldan, J.B.
  8. Gonzalez, M.B.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2017

Volumen: 64

Número: 8

Pages: 3159-3166

Type: Article

DOI: 10.1109/TED.2017.2717497 GOOGLE SCHOLAR
La source de données: Scopus