On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

1. Thomas, S.M.
2. Prest, M.J.
3. Whall, T.E.
4. Leadley, D.R.
5. Toniutti, P.
6. Conzatti, F.
7. Esseni, D.
8. Donetti, L.
9. Gmiz, F.
10. Lander, R.J.P.
11. Vellianitis, G.
12. Hellström, P.-E.
13. Stling, M.