On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
- Thomas, S.M.
- Prest, M.J.
- Whall, T.E.
- Leadley, D.R.
- Toniutti, P.
- Conzatti, F.
- Esseni, D.
- Donetti, L.
- Gmiz, F.
- Lander, R.J.P.
- Vellianitis, G.
- Hellström, P.-E.
- Stling, M.
Journal:
Journal of Applied Physics
ISSN: 0021-8979
Year of publication: 2011
Volume: 110
Issue: 12
Type: Article