An in-depth simulation study of Coulomb mobility in ultra-thin-body SOI MOSFETs

  1. Jiménez-Molinos, F.
  2. Roldn, J.B.
  3. Balaguer, M.
  4. Gmiz, F.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242,  1361-6641

Année de publication: 2010

Volumen: 25

Número: 5

Type: Article

DOI: 10.1088/0268-1242/25/5/055002 GOOGLE SCHOLAR
La source de données: Scopus