Recharging process of commercial floating-gate MOS transistor in dosimetry application

  1. Ilić, S.D.
  2. Andjelković, M.S.
  3. Duane, R.
  4. Palma, A.J.
  5. Sarajlić, M.
  6. Stanković, S.
  7. Ristić, G.S.
Revista:
Microelectronics Reliability

ISSN: 0026-2714

Any de publicació: 2021

Volum: 126

Tipus: Article

DOI: 10.1016/J.MICROREL.2021.114322 GOOGLE SCHOLAR lock_openAccés obert editor
Font de les dades: Scopus