Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

  1. Marin, E.G.
  2. Marian, D.
  3. Perucchini, M.
  4. Fiori, G.
  5. Iannaccone, G.
Revue:
ACS Nano

ISSN: 1936-086X,  1936-0851

Année de publication: 2020

Volumen: 14

Número: 2

Pages: 1982-1989

Type: Article

DOI: 10.1021/ACSNANO.9B08489 GOOGLE SCHOLAR lock_openAccès ouvert editor

Objectifs de Développement Durable

La source de données: Scopus