Multi-scale modeling of 2D GaSe FETs with strained channels

  1. Toral-Lopez, A.
  2. Santos, H.
  3. Marin, E.G.
  4. Ruiz, F.G.
  5. Palacios, J.J.
  6. Godoy, A.
Journal:
Nanotechnology

ISSN: 1361-6528,  0957-4484

Year of publication: 2022

Volume: 33

Issue: 10

Type: Article

DOI: 10.1088/1361-6528/AC3CE2 GOOGLE SCHOLAR
Data source: Scopus