Analytical Drain Current Model using Temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

  1. Cheralathan, M.
  2. Sampedro, C.
  3. Gamiz, F.
  4. Iniguez, B.
Collection de livres:
2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS)

ISSN: 2330-5738

ISBN: 978-1-4673-4802-7,  978-1-4673-4800-3

Année de publication: 2013

Pages: 142-145

Congreso: 14th International Conference on Ultimate Integration on Silicon (ULIS)

Type: Communication dans un congrès

GOOGLE SCHOLAR
La source de données: WoS