Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

  1. Carrillo-Nunez, H.
  2. Lee, J.
  3. Berrada, S.
  4. Medina-Bailon, C.
  5. Adamu-Lema, F.
  6. Luisier, M.
  7. Asenov, A.
  8. Georgiev, V.P.
Journal:
IEEE Electron Device Letters

ISSN: 0741-3106

Year of publication: 2018

Volume: 39

Issue: 9

Pages: 1473-1476

Type: Article

DOI: 10.1109/LED.2018.2859586 GOOGLE SCHOLAR lock_openOpen access editor
Data source: Scopus