2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application
- Duan, M.
- Adam-Lema, F.
- Cheng, B.
- Navarro, C.
- Wang, X.
- Georgiev, V. P.
- Gamiz, F.
- Millar, C.
- Asenov, A.
ISSN: 1946-1569
ISBN: 978-4-86348-610-2
Datum der Publikation: 2017
Seiten: 325-328
Kongress: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Art: Konferenz-Beitrag