2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application

  1. Duan, M.
  2. Adam-Lema, F.
  3. Cheng, B.
  4. Navarro, C.
  5. Wang, X.
  6. Georgiev, V. P.
  7. Gamiz, F.
  8. Millar, C.
  9. Asenov, A.
Book Series:
2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)

ISSN: 1946-1569

ISBN: 978-4-86348-610-2

Year of publication: 2017

Pages: 325-328

Congress: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Type: Conference paper

GOOGLE SCHOLAR
Data source: WoS