Influence of source-drain engineering and temperature on split-capacitance characteristics of FDSOI p-i-n gated diodes

  1. Sasaki, K. R. A.
  2. Navarro, C.
  3. Bawedin, M.
  4. Andrieu, F.
  5. Martino, J. A.
  6. Cristoloveanu, S.
Liburua:
2016 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)

ISBN: 978-1-5090-4391-0

Argitalpen urtea: 2016

Biltzarra: IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

Mota: Biltzar ekarpena

GOOGLE SCHOLAR
Datuen iturria: WoS