Influence of source-drain engineering and temperature on split-capacitance characteristics of FDSOI p-i-n gated diodes

  1. Sasaki, K.R.A.
  2. Navarro, C.
  3. Bawedin, M.
  4. Andrieu, F.
  5. Martino, J.A.
  6. Cristoloveanu, S.
Actas:
2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016

ISBN: 9781509043903

Año de publicación: 2016

2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016

Tipo: Aportación congreso

DOI: 10.1109/S3S.2016.7804373 GOOGLE SCHOLAR
Fuente de los datos: Scopus