Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration

1. Cuesta-Lopez, J.
2. Ganeriwala, M.D.
3. Marin, E.G.
4. Toral-Lopez, A.
5. Pasadas, F.
6. Ruiz, F.G.
7. Godoy, A.