Nanoestructuras, propiedades cuánticas y aplicaciones tecnológicas
NANOQUANTEC
Vienna University of Technology
Viena, AustriaVienna University of Technology-ko ikertzaileekin lankidetzan egindako argitalpenak (2)
2015
2001
-
Improving strained-Si on Si 1-xGe x deep submicron MOSFETs performance by means of a stepped doping profile
IEEE Transactions on Electron Devices, Vol. 48, Núm. 9, pp. 1878-1884