GRUPO DE INVESTIGACION EN DISPOSITIVOS ELECTRONICOS
GRIDE
Consejo Nacional de Investigaciones Científicas y Técnicas
Buenos Aires, ArgentinaPublicaciones en colaboración con investigadores/as de Consejo Nacional de Investigaciones Científicas y Técnicas (3)
2024
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High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors
Advanced Functional Materials, Vol. 34, Núm. 15
2021
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Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
Journal of Applied Physics, Vol. 130, Núm. 5
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On the thermal models for resistive random access memory circuit simulation
Nanomaterials, Vol. 11, Núm. 5