Centre National de la Recherche Scientifique-ko ikertzaileekin lankidetzan egindako argitalpenak (6)

2019

  1. Capacitorless memory devices using virtual junctions

    2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)

  2. Temperature and Gate Leakage Influence on the Z(2)-FET Memory Operation

    49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019)

2017

  1. Gate-induced vs. implanted body doping impact on Z(2)-FET DC operation

    2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)

2010

  1. Conductance of functionalized nanotubes, graphene and nanowires: From ab initio to mesoscopic physics

    Physica Status Solidi (B) Basic Research, Vol. 247, Núm. 11-12, pp. 2962-2967

2009

  1. Anomalous doping effects on charge transport in graphene nanoribbons

    Physical Review Letters, Vol. 102, Núm. 9

  2. Chemically induced mobility gaps in graphene nanoribbons: A route for upscaling device performances

    Nano Letters, Vol. 9, Núm. 7, pp. 2725-2729