MIGUEL ÁNGEL
CARVAJAL RODRÍGUEZ
PROFESOR TITULAR DE UNIVERSIDAD
MARÍA SOFÍA
MARTÍNEZ GARCÍA
Investigadora en el període 2015-2016
Publicacions en què col·labora amb MARÍA SOFÍA MARTÍNEZ GARCÍA (14)
2021
2019
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Fractal behavior of the trajectories of the foot centers of pressure during pregnancy
Biomedical Physics and Engineering Express, Vol. 5, Núm. 2
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Plantar pressure changes and their relationships with low back pain during pregnancy using instrumented insoles
Journal of Sensors, Vol. 2019
2017
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A compact dosimetric system for MOSFETs based on passive NFC tag and smartphone
Sensors and Actuators, A: Physical, Vol. 267, pp. 82-89
2016
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Dose verification system based on MOS transistor for real-time measurement
Sensors and Actuators, A: Physical, Vol. 247, pp. 269-276
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Response to ionizing radiation of different biased and stacked pMOS structures
Sensors and Actuators, A: Physical, Vol. 252, pp. 67-75
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Thermal compensation technique using the parasitic diode for DMOS transistors
Sensors and Actuators, A: Physical, Vol. 249, pp. 249-255
2015
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A preliminary study of the relation between back-pain and plantar-pressure evolution during pregnancy
Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS
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Accuracy improvement of MOSFET dosimeters in case of variation in thermal parameters
IEEE Transactions on Nuclear Science, Vol. 62, Núm. 2, pp. 487-493
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Comparative study of MOSFET response to photon and electron beams in reference conditions
Sensors and Actuators, A: Physical, Vol. 225, pp. 95-102
2014
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A simplified thermal model for lateral MOSFET and its application to temperature monitoring
Semiconductor Science and Technology, Vol. 29, Núm. 9
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Embedded sensor insole for wireless measurement of gait parameters
Australasian Physical and Engineering Sciences in Medicine, Vol. 37, Núm. 1, pp. 25-35
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General purpose MOSFETs for the dosimetry of electron beams used in intra-operative radiotherapy
Sensors and Actuators, A: Physical, Vol. 210, pp. 175-181
2012
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Study of the subthreshold swing of a pMOSFET as a dosimetric parameter
Sensors and Actuators, A: Physical, Vol. 187, pp. 16-21