Publicacions en què col·labora amb ANDRÉS GODOY MEDINA (67)

2019

  1. A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

    Solid-State Electronics, Vol. 159, pp. 19-25

  2. Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152

2018

  1. 3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  2. Impact of Strain on S/D tunneling in FinFETs: A MS-EMC study

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  4. Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs

    Solid-State Electronics, Vol. 143, pp. 49-55

  5. Source-to-drain tunneling analysis in FDSOI, DGSOI, and FinFET devices by means of multisubband ensemble Monte Carlo

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 11, pp. 4740-4746

2017

  1. Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  2. Confinement orientation effects in S/D tunneling

    Solid-State Electronics, Vol. 128, pp. 48-53

  3. Multi-subband ensemble Monte Carlo simulations of scaled GAA MOSFETs

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  4. Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  5. Three-dimensional multi-subband simulation of scaled FinFETs

    European Solid-State Device Research Conference

2016

  1. Confinement orientation effects in S/D tunneling

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  2. Impact of non uniform strain configuration on transport properties for FD14+ devices

    Solid-State Electronics, Vol. 115, pp. 232-236

  3. Multi-subband ensemble Monte Carlo study of band-to-band tunneling in silicon-based TFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2015

  1. Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo study

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Impact of non uniform strain configuration on transport properties for FD14+ devices

    EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

  3. Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  4. Sub-22nm scaling of UTB2SOI devices for Multi-Vt applications

    EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

2014

  1. 3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD