Publications dans lesquelles il/elle collabore avec ANDRÉS GODOY MEDINA (47)

2019

  1. A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

    Solid-State Electronics, Vol. 159, pp. 19-25

  2. Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152

2018

  1. 3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  2. Impact of Strain on S/D tunneling in FinFETs: A MS-EMC study

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  4. Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs

    Solid-State Electronics, Vol. 143, pp. 49-55

  5. Source-to-drain tunneling analysis in FDSOI, DGSOI, and FinFET devices by means of multisubband ensemble Monte Carlo

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 11, pp. 4740-4746

2017

  1. Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  2. Confinement orientation effects in S/D tunneling

    Solid-State Electronics, Vol. 128, pp. 48-53

  3. Multi-subband ensemble Monte Carlo simulations of scaled GAA MOSFETs

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  4. Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  5. Three-dimensional multi-subband simulation of scaled FinFETs

    European Solid-State Device Research Conference

2016

  1. Confinement orientation effects in S/D tunneling

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  2. Impact of non uniform strain configuration on transport properties for FD14+ devices

    Solid-State Electronics, Vol. 115, pp. 232-236

  3. Multi-subband ensemble Monte Carlo study of band-to-band tunneling in silicon-based TFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2015

  1. Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo study

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Impact of non uniform strain configuration on transport properties for FD14+ devices

    EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

  3. Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  4. Strain effects on effective masses for MoS2 monolayers

    Journal of Physics: Conference Series

  5. Sub-22nm scaling of UTB2SOI devices for Multi-Vt applications

    EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon