Publicaciones en las que colabora con JUAN BAUTISTA ROLDÁN ARANDA (4)

2012

  1. Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation

    Solid-State Electronics, Vol. 67, Núm. 1, pp. 30-37

2010

  1. Hole transport in DGSOI devices: Orientation and silicon thickness effects

    Solid-State Electronics, Vol. 54, Núm. 2, pp. 191-195

2009

  1. Monte Carlo simulation of nanoelectronic devices

    Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191

2006

  1. Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility

    Journal of Applied Physics, Vol. 100, Núm. 1