2011

1. Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

   Journal of Applied Physics, Vol. 110, Núm. 6

2. On the effective mass of holes in inversion layers

   2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

3. On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

   Journal of Applied Physics, Vol. 110, Núm. 12