NORBERTO JOSÉ
SALAZAR MOREIRA
Investigador en el periodo 2021-2021
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STMicroelectronics
Ginebra, SuizaPublicaciones en colaboración con investigadores/as de STMicroelectronics (2)
2019
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Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell
IEEE Electron Device Letters, Vol. 40, Núm. 7, pp. 1084-1087
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Temperature and Gate Leakage Influence on the Z2-FET Memory Operation
European Solid-State Device Research Conference