2011

1. Influence of orientation, geometry, and strain on electron distribution in silicon gate-all-around (GAA) MOSFETs

   IEEE Transactions on Electron Devices, Vol. 58, Núm. 10, pp. 3350-3357

2. Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

   Solid-State Electronics, Vol. 65-66, Núm. 1, pp. 88-93

3. Surface roughness scattering model for arbitrarily oriented silicon nanowires

   Journal of Applied Physics, Vol. 110, Núm. 8