ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
DEPARTAMENTO
![Foto de ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES](/img/noimage.png)
![Foto de Institut de Microélectronique, Electromagnétisme et Photonique](/img/noimage_org.png)
Institut de Microélectronique, Electromagnétisme et Photonique
Grenoble, FranciaPublicaciones en colaboración con investigadores/as de Institut de Microélectronique, Electromagnétisme et Photonique (6)
2019
-
Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells
Solid-State Electronics, Vol. 159, pp. 12-18
-
Temperature and Gate Leakage Influence on the Z2-FET Memory Operation
European Solid-State Device Research Conference
2018
-
Gate-induced vs. implanted body doping impact on Z2-FET DC operation
2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
2016
-
Influence of source-drain engineering and temperature on split-capacitance characteristics of FDSOI p-i-n gated diodes
2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
2007
-
Geometric magnetoresistance and mobility behavior in single-gate and double-gate SOI devices
Proceedings - IEEE International SOI Conference
-
Mobility issues in double-gate SOI MOSFETs: Characterization and analysis
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference