Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Publicaciones (142) Publicaciones en las que ha participado algún/a investigador/a
2014
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3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and Nanowire Transistors
2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)
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3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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A comprehensive analysis on progressive reset transitions in RRAMs
Journal of Physics D: Applied Physics, Vol. 47, Núm. 20
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A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines
Mathematics and Computers in Simulation, Vol. 102, pp. 1-10
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A measurement of the ratio of the production cross sections for W and Z bosons in association with jets with the ATLAS detector
European Physical Journal C, Vol. 74, Núm. 12
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A neural network clustering algorithm for the ATLAS silicon pixel detector
Journal of Instrumentation, Vol. 9, Núm. 9
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A novel electrode structure compared with interdigitated electrodes as capacitive sensor
Sensors and Actuators, B: Chemical, Vol. 204, pp. 552-560
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A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
Computers and Mathematics with Applications, Vol. 67, Núm. 9, pp. 1703-1721
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A simplified thermal model for lateral MOSFET and its application to temperature monitoring
Semiconductor Science and Technology, Vol. 29, Núm. 9
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A2RAM: Low-power 1T-DRAM memory cells compatible with planar and 3D SOI substrates
2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
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A2RAM: Low-power 1T-DRAM memory cells compatible with planar and 3D SOI substrates
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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ATLAS Collaboration
Nuclear Physics A
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Algebraic circuits
Intelligent Systems Reference Library, Vol. 66, pp. iii-v
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An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal-oxide-semiconductor integration
Journal of Applied Physics
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Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects
Solid-State Electronics, Vol. 92, pp. 28-34
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Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models
Solid-State Electronics, Vol. 98, pp. 2-6
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Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
Applied Physics Letters, Vol. 105, Núm. 8
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Compact cryptoprocessor for securing wireless communications in FECG portable instrumentation
Proceedings of the 2014 29th Conference on Design of Circuits and Integrated Systems, DCIS 2014
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Compact modeling and contact effects in thin film transistors
IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 266-277
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Comprehensive measurements of t-channel single top-quark production cross sections at √s=7 TeV with the ATLAS detector
Physical Review D - Particles, Fields, Gravitation and Cosmology, Vol. 90, Núm. 11