Publicacions (204) Publicacions en què ha participat algun/a investigador/a

2015

  1. Search for direct pair production of a chargino and a neutralino decaying to the 125 GeV Higgs boson in √ s = 8 TeV pp collisions with the ATLAS detector

    European Physical Journal C, Vol. 75, Núm. 5

  2. A Preliminary Study of the Relation Between Back-Pain and Plantar-Pressure Evolution during Pregnancy

    2015 37TH ANNUAL INTERNATIONAL CONFERENCE OF THE IEEE ENGINEERING IN MEDICINE AND BIOLOGY SOCIETY (EMBC)

  3. A SPICE compact model for unipolar RRAM reset process analysis

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 3, pp. 955-962

  4. A Space weather information service based upon remote and in-situ measurements of coronal mass ejections heading for Earth: A concept mission consisting of six spacecraft in a heliocentric orbit at 0.72 AU

    Journal of Space Weather and Space Climate, Vol. 5

  5. A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners

    Solid-State Electronics, Vol. 111, pp. 180-187

  6. A preliminary study of the relation between back-pain and plantar-pressure evolution during pregnancy

    Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS

  7. A printed capacitive-resistive double sensor for toluene and moisture sensing

    Sensors and Actuators, B: Chemical, Vol. 210, pp. 542-549

  8. A search for high-mass resonances decaying to τ+τ− in pp collisions at √s =8 TeV with the ATLAS detector

    Journal of High Energy Physics, Vol. 2015, Núm. 7

  9. ATLAS Run 1 searches for direct pair production of third-generation squarks at the Large Hadron Collider

    European Physical Journal C, Vol. 75, Núm. 10

  10. Accuracy improvement of MOSFET dosimeters in case of variation in thermal parameters

    IEEE Transactions on Nuclear Science, Vol. 62, Núm. 2, pp. 487-493

  11. Adaptative ECT system based on reconfigurable electronics

    Measurement: Journal of the International Measurement Confederation, Vol. 74, pp. 238-245

  12. An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs

    Solid-State Electronics, Vol. 111, pp. 47-51

  13. An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors

    Mathematics and Computers in Simulation, Vol. 118, pp. 248-257

  14. Analysis of events with b-jets and a pair of leptons of the same charge in pp collisions at √s=8 TeV with the ATLAS detector

    Journal of High Energy Physics, Vol. 2015, Núm. 10, pp. 1-51

  15. Analytic Potential and Charge Model of Semiconductor Quantum Wells

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 12, pp. 4186-4191

  16. Analytic drain current model for III-V cylindrical nanowire transistors

    Journal of Applied Physics, Vol. 118, Núm. 4

  17. Analytical model for crosstalk in p-nwell photodiodes

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 2, pp. 580-586

  18. Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

    Applied Physics Letters, Vol. 106, Núm. 26

  19. Back-gate effects and detailed characterization of junctionless transistor

    European Solid-State Device Research Conference

  20. Back-gate effects and detailed characterization of junctionless transistor

    ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE