Dependence of the electron cross section for the acceptor gold level in silicon on the gold to donor ratio

  1. Morante, J.R.
  2. Carceller, J.E.
  3. Herms, A.
  4. Cartujo, P.
  5. Barbolla, J.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 1982

Volumen: 41

Número: 7

Pages: 656-658

Type: Article

DOI: 10.1063/1.93603 GOOGLE SCHOLAR