A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

  1. Donetti, L.
  2. Sampedro, C.
  3. Ruiz, F.G.
  4. Godoy, A.
  5. Gamiz, F.
Revue:
Solid-State Electronics

ISSN: 0038-1101

Année de publication: 2019

Volumen: 159

Pages: 19-25

Type: Article

DOI: 10.1016/J.SSE.2019.03.044 GOOGLE SCHOLAR
La source de données: Scopus