Characteristics of band modulation FET on sub 10 nm SOI

  1. Kwon, S.
  2. Navarro, C.
  3. Gamiz, F.
  4. Cristoloveanu, S.
  5. Galy, P.
  6. Choi, M.
  7. Kim, Y.T.
  8. Ahn, J.
Journal:
Japanese Journal of Applied Physics

ISSN: 1347-4065,  0021-4922

Year of publication: 2019

Volume: 58

Issue: SB

Type: Article

DOI: 10.7567/1347-4065/AAFC9F GOOGLE SCHOLAR
Data source: Scopus