Characteristics of band modulation FET on sub 10 nm SOI

  1. Kwon, S.
  2. Navarro, C.
  3. Gamiz, F.
  4. Cristoloveanu, S.
  5. Galy, P.
  6. Choi, M.
  7. Kim, Y.T.
  8. Ahn, J.
Revue:
Japanese Journal of Applied Physics

ISSN: 1347-4065,  0021-4922

Année de publication: 2019

Volumen: 58

Número: SB

Type: Article

DOI: 10.7567/1347-4065/AAFC9F GOOGLE SCHOLAR
La source de données: Scopus