Thorough Understanding of Retention Time of Z2FET Memory Operation

  1. Duan, M.
  2. Navarro, C.
  3. Cheng, B.
  4. Adamu-Lema, F.
  5. Wang, X.
  6. Georgiev, V.P.
  7. Gamiz, F.
  8. Millar, C.
  9. Asenov, A.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2019

Volumen: 66

Número: 1

Pages: 383-388

Type: Article

DOI: 10.1109/TED.2018.2877977 GOOGLE SCHOLAR
La source de données: Scopus