Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

  1. Padilla, J.L.
  2. Medina-Bailón, C.
  3. Márquez, C.
  4. Sampedro, C.
  5. Donetti, L.
  6. Gámiz, F.
  7. Ionescu, A.M.
Aldizkaria:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Argitalpen urtea: 2018

Alea: 65

Zenbakia: 10

Orrialdeak: 4679-4686

Mota: Artikulua

DOI: 10.1109/TED.2018.2866123 GOOGLE SCHOLAR
Datuen iturria: Scopus