Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
- Padilla, J.L.
- Medina-Bailón, C.
- Márquez, C.
- Sampedro, C.
- Donetti, L.
- Gámiz, F.
- Ionescu, A.M.
ISSN: 0018-9383
Année de publication: 2018
Volumen: 65
Número: 10
Pages: 4679-4686
Type: Article