A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters

  1. Cristoloveanu, S.
  2. Lee, K.H.
  3. Parihar, M.S.
  4. El Dirani, H.
  5. Lacord, J.
  6. Martinie, S.
  7. Le Royer, C.
  8. Barbe, J.-C.
  9. Mescot, X.
  10. Fonteneau, P.
  11. Galy, P.
  12. Gamiz, F.
  13. Navarro, C.
  14. Cheng, B.
  15. Duan, M.
  16. Adamu-Lema, F.
  17. Asenov, A.
  18. Taur, Y.
  19. Xu, Y.
  20. Kim, Y.-T.
  21. Wan, J.
  22. Bawedin, M.
Revue:
Solid-State Electronics

ISSN: 0038-1101

Année de publication: 2018

Volumen: 143

Pages: 10-19

Type: Article

DOI: 10.1016/J.SSE.2017.11.012 GOOGLE SCHOLAR