Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

  1. Padilla, J.L.
  2. Alper, C.
  3. Medina-Bailón, C.
  4. Gámiz, F.
  5. Ionescu, A.M.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2015

Volumen: 106

Número: 26

Type: Article

DOI: 10.1063/1.4923467 GOOGLE SCHOLAR

Objectifs de Développement Durable