Modeling the channel charge and potential in quasi-ballistic nanoscale double-gate MOSFETs

  1. Mangla, A.
  2. Sallese, J.-M.
  3. Sampedro, C.
  4. Gamiz, F.
  5. Enz, C.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2014

Volume: 61

Issue: 8

Pages: 2640-2646

Type: Article

DOI: 10.1109/TED.2014.2327255 GOOGLE SCHOLAR
Data source: Scopus