Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
- Donetti, L.
- Gámiz, F.
- Thomas, S.
- Whall, T.E.
- Leadley, D.R.
- Hellström, P.-E.
- Malm, G.
- Östling, M.
Aldizkaria:
Journal of Applied Physics
ISSN: 0021-8979
Argitalpen urtea: 2011
Alea: 110
Zenbakia: 6
Mota: Artikulua