Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
- Donetti, L.
- Gámiz, F.
- Thomas, S.
- Whall, T.E.
- Leadley, D.R.
- Hellström, P.-E.
- Malm, G.
- Östling, M.
Revue:
Journal of Applied Physics
ISSN: 0021-8979
Année de publication: 2011
Volumen: 110
Número: 6
Type: Article